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PD20010-E

Transistors RF MOSFET Power POWER R.F.

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SeekIC No. : 00220175 Detail

PD20010-E: Transistors RF MOSFET Power POWER R.F.

PD20010-E Data Sheet

floor Price/Ceiling Price

US $ 6.5~6.74 / Piece | Get Latest Price
Part Number:
PD20010-E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~309
  • 309~500
  • 500~1000
  • Unit Price
  • $6.74
  • $6.58
  • $6.5
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/20

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 2 GHz Gain : 11 dB
Output Power : 10 W Drain-Source Breakdown Voltage : 40 V
Continuous Drain Current : 5 A Gate-Source Breakdown Voltage : 15 V
Maximum Operating Temperature : + 150 C Package / Case : PowerSO-10RF (Formed Lead)
Packaging : Tube    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : 15 V
Drain-Source Breakdown Voltage : 40 V
Package / Case : PowerSO-10RF (Formed Lead)
Frequency : 2 GHz
Continuous Drain Current : 5 A
Gain : 11 dB
Output Power : 10 W


Parameters:

Technical/Catalog InformationPD20010-E
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel
Voltage - Rated 40V
Current Rating5A
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PD20010 E
PD20010E



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