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PHM12NQ20T

Features: · SOT96 (SO-8) footprint compatible · Low thermal resistance· Surface mount package · Low profile.Application· DC-DC converter primary side switch n Portable equipment applications.Specifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltag...

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SeekIC No. : 004460529 Detail

PHM12NQ20T: Features: · SOT96 (SO-8) footprint compatible · Low thermal resistance· Surface mount package · Low profile.Application· DC-DC converter primary side switch n Portable equipment applications.Specifi...

PHM12NQ20T Data Sheet

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Part Number:
PHM12NQ20T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· SOT96 (SO-8) footprint compatible
· Low thermal resistance
· Surface mount package
· Low profile.


Application

· DC-DC converter primary side switch n Portable equipment applications.


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC) Tj = 25 to 150 °C
-
200
V
VDGR
 drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 k
-
200
V
VGS
 gate-source voltage (DC)  
-
±20
V
ID
 drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
14.4
A
Tmb = 100 °C; VGS = 10 V; Figure 2
-
5.8
A
IDM
 peak drain current Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
56.8
A
Ptot
 total power dissipation Tmb = 25 °C; Figure 1
-
62.5
W
Tstg
 storage temperature  
-55
+150
°C
Tj
 junction temperature  
-55
+150
°C
Source-drain diode
IS
 source (diode forward) current (DC) Tmb = 25 °C
-
14.4
A
ISM
 peak source (diode forward) current Tmb = 25 °C; tp 10 s
-
56
A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:PHM12NQ20T in SOT685-1 (QLPAK).




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