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PHM12NQ20T,518

MOSFET N-CH 200V 14.4A SOT685-1

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SeekIC No. : 003432258 Detail

PHM12NQ20T,518: MOSFET N-CH 200V 14.4A SOT685-1

PHM12NQ20T,518 Data Sheet

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Part Number:
PHM12NQ20T,518
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 200V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 14.4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 26nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1230pF @ 25V
Power - Max: 62.5W Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-HVSON    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 26nC @ 10V
Power - Max: 62.5W
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Package / Case: 8-VDFN Exposed Pad
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-HVSON
Current - Continuous Drain (Id) @ 25° C: 14.4A
Input Capacitance (Ciss) @ Vds: 1230pF @ 25V
Rds On (Max) @ Id, Vgs: 130 mOhm @ 12A, 10V


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