PHM15NQ20T

·SOT96(SO-8)footprint compatible

·Low thermal resistance

·Sunrace mounted package

·Low  profile

The PHM15NQ20T is designed as one kind of N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology that can be used in DC-to-DC primary side and Portable appliances applications. This device has four points of features (1)SOT96 (SO-8) footprint compatible; (2)Low thermal resistance; (3)Surface mounted package; (4)Low profile.

The absolute maximum ratings of the PHM15NQ20T can be summarized as:(1)drain-source voltage (DC): 200 V;(2)drain-gate voltage (DC): 200 V;(3)gate-source voltage (DC): ±20 V;(4)drain current (DC): 17.5 A or 11 A;(5)peak drain current: 60 A;(6)total power dissipation: 62.5 W;(7)storage temperature: -55 to +150 °C;(8)junction temperature: -55 to +150 °C;(9)source (diode forward) current (DC): 17.5 A;(10)peak source (diode forward) current: 60 A.

The electrical characteristics of this PHM15NQ20T can be summarized as:(1)drain-source breakdown voltage: 200 V;(2)gate-source threshold voltage: 2 to 4 V;(3)drain-source leakage current: 1 or 100 uA;(4)gate-source leakage current: 10 to 100 nA;(5)drain-source on-state resistance: 68 to 204 m;(6)total gate charge: 40 nC;(7)gate-source charge: 6 nC;(8)gate-drain (Miller) charge: 12.7 nC. If you want to know more information about the PHM15NQ20T, please download the datasheet in www.seekic.com or www.chinaicmart.com .