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Part Number: PHP50N06LT

 

 

 

D/C: 07+

Description: N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'tr...


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PHP50N06LT General Description


N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHP50N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB50N06LT is supplied in the SOT404 surface mounting package.

The PHD50N06LT is supplied in the SOT428 surface mounting package.

PHP50N06LT Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj =25 to 175 - 55 V
VDGR Drain-gate voltage Tj =25 to 175 ; RGS = 20 k - 55 V
VGS Gate-source voltage -- ±13 V
ID Continuous drain current Tmb = 25 50 A
Tmb = 100 - 35 A
IDM Pulsed drain current Tmb = 25 - 200 A
PD Total power dissipation Tmb = 25 - 125 W
Tj, Tstg Operating junction and
storage temperature
-55 175

PHP50N06LT Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance

PHP50N06LT Connection Diagram

PHP50N06LT  Connection Diagram

PHP50N06LT datasheet

PHP50N06LT
PDF/DataSheet Download

  • Datasheet: PHP50N06LT
  • File Size: 82724 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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