MFG:PHIL Package Cooled:T0-220 D/C:08+
MFG: PHIL
Package Cooled: T0-220
D/C: 08+
Description: N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanch...
N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
SYMBOL |
PARAMETER | CONDITIONS | MIN. |
MAX. |
UNIT |
ID |
Continuous drain current |
Tmb = 25 ; VGS = 10V |
- |
5 3.5 |
A |
IDM |
Pulsed drain current | Tmb = 25 | - |
20 |
A |
PD |
Total dissipation | Tmb = 25 | - |
60 |
W |
PD/Tmb |
Linear derating factor | Tmb > 25 | - |
0.4 |
W/K |
VGS |
Gate-source voltage | - |
± 30 |
V | |
EAS |
Single pulse avalanche energy | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
5 |
mJ |
IAS |
Peak avalanche current | VDD 50 V; starting Tj = 25; RGS = 50 ;VGS = 5 V |
- |
5 |
A |
Tj, Tstg |
Operating junction and storage temperature range | -55 |
175 |
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHP5N20E
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