PHT6N10T

N-channel enchancement mode field-effect power transistor in a plastic envelope using"trench" technology. The PHT6N10T has very low on-state resistance. PHT6N10T is intended for use in dc to dc converters and general purpose switching applications.It has six unique features: the first one is "Trench" technology. The second one is low on-state resistance. The third one is fast switching. The forth one is stable off-state charactersitics. The fifth one is high thermal cycling performance. The sixth one is low thermal resistance.

There are some limiting values of PHT6N10T(limiting values in accordance with the absolute maximum system).Drain-source voltage(V_DSS) is 100 V max when Tj is 25 to 175.Drain-gate voltage(V_DGR) is 100 V when Tj is 25 to 175,R_GS is 20 k. Gate-source voltage is ±20 V. Continuous drian current(DC)(I_D) is 6 A when Tsp is 25 or is 3.8 A when Tsp is 100.Drain current(pulse peak value)(I_DM) is 24 A when Tsp is 25.Total power dissipation(Ptot) is 8.3 W when Tsp is 25. Junction temperature(Tj) is 150.Otherwise, there are also some thermal resistances about it.Thermal resistance junction to solder point is 12 k/W typ and 15 k/W max. Thermal resistance junction to ambient is 70 K/W typ (pcb mounted;minimum footprint).Electrical characteristics: Drain-source breakdwon voltage(V_(BR)DSS ) is 100 V min when V_GS is 0V, I_D is 0.25 mA. Gate threshold voltage (V_GS(TO) ) is 2.0 Vmin,3.0 V typ and 4.0 V max when V_DS is V_GS, I_D is 1 mA. Drain-source leakage current(I_DSS) is 1uA typ and 25 uA max when V_DS is 100 V , V_GS is 0 V.Gate-source leakage current(I_GSS) is 10 nA typ and 100 nA max when V_GS is ±10 V,V_DS is 0 V.Drain-source on-state resistance(R_DS(ON) ) is 90 mtyp and 100 m max when V_GS is 10 V ,Tj is 150, I_D is 3 A. Total gate charge is 20 nC typ and 26 nC max when V_DD is 80 V , V_GS is 10 V,I_D is 6 A .Gate to source charge is 3 nC typ and 5 nC max when  V_DD is 80 V , V_GS is 10 V,I_D is 6 A .

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