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PHT6NQ10T

Features: • 'Trench' technology• Low on-state resistance • Fast switching• Low thermal resistanceApplication• Motor and relay drivers • d.c. to d.c. convertersSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - ...

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SeekIC No. : 004460726 Detail

PHT6NQ10T: Features: • 'Trench' technology• Low on-state resistance • Fast switching• Low thermal resistanceApplication• Motor and relay drivers • d.c. to d.c. convertersSpe...

PHT6NQ10T Data Sheet

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Part Number:
PHT6NQ10T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Description



Features:

• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance




Application

• Motor and relay drivers
• d.c. to d.c. converters


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage   - 100 V
VDGR Drain-gate voltage RGS = 20 k - 100 V
VGS Gate-source voltage - - ± 20 V
ID Continuous drain current (dc) Tsp = 25 °C Tamb = 25 °C - 6.5 3 A A
ID Continuous drain current (dc) Tsp = 100 °C Tamb =100 °C - 4.1 1.9 A A
IDM Pulsed drain current
   - 26 A
PD Total power dissipation Tsp = 25 °C Tamb=25 °C - 8.3 1.8 W W
Tj Tstg operating temperature and Storage temperature   -55 150 °C



Description

PHT6NQ10T N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology




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