PN4416

Forward Transconductance gFS (Max / Min) :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Drain Source Voltage VDS : 30 V
Maximum Drain Gate Voltage : - 30 V
Gate-Source Cutoff Voltage : - 6 V
Drain Current (Idss at Vgs=0) : 5 mA to 15 mA
Packaging : Bulk
Power Dissipation : 400 mW
Resistance Drain-Source RDS (on) : 7.67 Ohms
Gate-Source Breakdown Voltage : -30 V
Continuous Drain Current : 15 mA


Features:

·Low noise
·Interchangeability of drain and source connections
·High gain.




Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.




Pinout






Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage PN4416 PN4416A		- -	30 35	V V
VGSO	gate-source voltage PN4416 PN4416A		- -	-30 -35	V V
VGDO	gate-drain voltage PN4416 PN4416A		- -	-30 -35	V V
IG	DC forward gate current		-	10	mA
Ptot	total power dissipation	up to Tamb= 25 °C (note 1)	-	400	mW
Tstg	storage temperature		-65	+150
Tj	junction temperature		-	150

Description

PN4416 N-channel symmetrical silicon junction FETs in a SOT54 envelope.These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers.




Parameters:

Technical/Catalog Information	PN4416
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	30V
Current Rating	50mA
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PN4416 PN4416