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Part Number: PN4416A

 

 

Package Cooled: CAN

 

Description: N-channel symmetrical silicon junction FETs in a SOT54 envelope.These devices are intended for use in VHF/UHF amplifier...


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PN4416A General Description


N-channel symmetrical silicon junction FETs in a SOT54 envelope.These devices are intended for use in VHF/UHF amplifiers, oscillators and mixers.

PN4416A Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS drain-source voltage
PN4416
PN4416A
  -
-
30
35
V
V
VGSO gate-source voltage
PN4416
PN4416A
  -
-
-30
-35
V
V
VGDO gate-drain voltage
PN4416
PN4416A
  -
-
-30
-35
V
V
IG DC forward gate current   - 10 mA
Ptot total power dissipation up to Tamb = 25 °C (note 1) - 400 mW
Tstg storage temperature   -65 +150
Tj junction temperature   - 150

PN4416A Features

·Low noise
·Interchangeability of drain and source connections
·High gain.

PN4416A Typical Application

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PN4416A Connection Diagram

PN4416A  Connection Diagram

PN4416A datasheet

PN4416A
PDF/DataSheet Download

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