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RA05H8693M

Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=14V, VGG=0V)• Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW• IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW• Broadband Frequency Range: 866-928MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V&#...

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SeekIC No. : 004469598 Detail

RA05H8693M: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=14V, VGG=0V)• Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW• IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mWR...

RA05H8693M Data Sheet

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Part Number:
RA05H8693M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=14V, VGG=0V)
• Pout>5W, IT<1.4A @ VDD=14V, VGG=5V, Pin=1mW
• IT<1.4A @ VDD=14V, Pout=3W(VGG control), Pin=1mW
• Broadband Frequency Range: 866-928MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
 Drain Voltage VGG<5V
17
V
VGG
 Gate Voltage VDD<14V, Pin=0mW
6
V
Pin
 Input Power f=866-928MHz, VGG<5V ZG=ZL=50
4
mW
Pout
 Output Power
7
W
Tcase(OP)
 Operation Case Temperature Range ditto
-30 to +110
°C
Tstg
 Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.




Description

The RA05H8693M is a 5watt RF MOSFET Amplifier Module that operate in the 866 to 928MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA05H8693M. The output power and drain current increase as the gate voltage increases.With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.8V (typical) and 4V (maximum).At VGG=5V, the typical gate current is 1 mA.






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