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RD20HMF1

Features: High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.ApplicationFor output stage of high power amplifiers in 900MHz band Mobile radio sets.Specifications SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSSVGSSIDPinPchTjTstgRthj-c Drain ...

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SeekIC No. : 004475517 Detail

RD20HMF1: Features: High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.ApplicationFor output stage of high power amplifiers in 900MHz band Mobile radio sets.Specifications ...

RD20HMF1 Data Sheet

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Part Number:
RD20HMF1
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

High power gain: Pout>20W, Gp>8.2dB @Vdd=12.5V,f=900MHz High Efficiency: 55%typ.




Application

For output stage of high power amplifiers in 900MHz band Mobile radio sets.




Specifications

SYMBOL
PARAMETER
CONDITIONS
RATINGS
UNIT
VDSS
VGSS
ID
Pin
Pch
Tj
Tstg
Rthj-c		 Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
-
-
-
junction to case
30
+/-20
71.4
6
6
175
-40 to +175
2.1
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.





Description

RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers applications.




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