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RDN150N20FU6

MOSFET PWR MOSFET TR DRIVE VLTG-10V

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SeekIC No. : 00158285 Detail

RDN150N20FU6: MOSFET PWR MOSFET TR DRIVE VLTG-10V

RDN150N20FU6 Data Sheet

floor Price/Ceiling Price

US $ .58~.58 / Piece | Get Latest Price
Part Number:
RDN150N20FU6
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~500
  • Unit Price
  • $.58
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2026/4/19

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Product Details

Quick Details

Drain-Source Breakdown Voltage : 200 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.12 Ohms Mounting Style : Through Hole
Package / Case : TO-220FN Packaging : Bulk    

Description

Transistor Polarity :
Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 200 V
Packaging : Bulk
Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.12 Ohms
Package / Case : TO-220FN


Parameters:

Technical/Catalog InformationRDN150N20FU6
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs160 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 1224pF @ 10V
Power - Max40W
PackagingBulk
Gate Charge (Qg) @ Vgs64nC @ 10V
Package / CaseTO-220FN-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RDN150N20FU6
RDN150N20FU6



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