RF1K49157

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 6.3 A
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.03 Ohms
Configuration : Single Quad Drain Dual Source
Package / Case : SOP-8


Features:

• 6.3A, 30V
• r _DS(ON) = 0.030W
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Voltage (Note 1)	VDSS	30	V
Drain to Gate Voltage (RGS = 20kW)(Note 1)	VDGR	30	V
Gate to Source Voltage	VGS	±20	V
Drain Current Continuous (Pulse width = 1s)	ID	6.3	A
Pulsed (Figure 5)	IDM	Refer to Peak Current Curve
Pulse Avalanche Rating(Figure 6)	EAS	Refer to UIS Curve
Power Dissipation TA = 25.	PD	2	W
Derate Above 25		0.016	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	44TL Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

This Single N-Channel power MOSFET RF1K49157 is manufactured using an advanced MegaFET process.RF1K49157, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1K49157 was designed for use in applications such as switching regulators, switching convertors, motor drivers, relay drivers, and low voltage bus switches. RF1K49157 can be operated directly from integrated circuits.

Formerly developmental type TA49157.