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RF1S30N06LE

Features: • 30A, 60V• r DS(ON) = 0.047W• 2kV ESD Protected• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating CurveSpecifications UNITS Drain Source Voltage VDSS 60 V Drain Gate Voltage VDGR 60 V Gate ...

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SeekIC No. : 004476143 Detail

RF1S30N06LE: Features: • 30A, 60V• r DS(ON) = 0.047W• 2kV ESD Protected• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating CurveSpecificatio...

RF1S30N06LE Data Sheet

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Part Number:
RF1S30N06LE
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 30A, 60V
• r DS(ON) = 0.047W
• 2kV ESD Protected
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve


Specifications

      UNITS
Drain Source Voltage VDSS 60 V
Drain Gate Voltage VDGR 60 V
Gate Source Voltage VGS ±10,8 V
Drain Current RMS Continuous. ID 30 A
Pulsed Drain Current IDM Refer to Peak Current Curve  
Pulsed Avalanche Rating EAS Refer to UIS Curve  
Power Dissipation TC = +25 PD 96 W
Derate above +25oC.   0.645 W/
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) ESD 2 kV
Operating and Storage Temperature TSTG, TJ -55 to 175
Soldering Temperature of Leads for 10s TL 260








Description

The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S30N06LE, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors RF1S30N06LEcan be operated directly from integrated circuits.

These transistors RF1S30N06LE incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.




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