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RF1S30N06LESM

Features: • 30A, 60V• r DS(ON) = 0.047W• 2kV ESD Protected• Temperature Compensating PSPICE™ Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specif...

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RF1S30N06LESM: Features: • 30A, 60V• r DS(ON) = 0.047W• 2kV ESD Protected• Temperature Compensating PSPICE™ Model• Peak Current vs Pulse Width Curve• UIS Rating Curve̶...

RF1S30N06LESM Data Sheet

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Part Number:
RF1S30N06LESM
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 30A, 60V
• r DS(ON) = 0.047W
• 2kV ESD Protected
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

      UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 60 V
Gate to Source Voltage VGS ±10,8 V
Continuous Drain Current ID 30 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve  
Single Pulse Avalanche Rating EAS Refer to UIS Curve  
Power Dissipation PD 96 W
Derate Above 25   0.645 W/
Electrostatic Discharge Rating, MIL-STD-883, Category B(2). ESD 2 kV
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 T L
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Description

These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S30N06LESM, which uses feature
sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RF1S30N06LESM were designed for use in applications  such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

These transistors RF1S30N06LESM incorporate ESD protection and are designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49027.




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