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RF1S40N10SM

Features: • 40A, 100V• rDS(ON) = 0.040• UIS Rating Curve• SOA is Power Dissipation Limited• 175Operating Temperature• Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications UNITS Drain to Source Br...

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RF1S40N10SM: Features: • 40A, 100V• rDS(ON) = 0.040• UIS Rating Curve• SOA is Power Dissipation Limited• 175Operating Temperature• Related Literature - TB334 Guidelines for S...

RF1S40N10SM Data Sheet

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Part Number:
RF1S40N10SM
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 40A, 100V
• rDS(ON) = 0.040
• UIS Rating Curve
• SOA is Power Dissipation Limited
• 175 Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

      UNITS
Drain to Source Breakdown Voltage (Note 1) VDSS 100 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . VDGR 100 V
Gate to Source Voltage VGS ±20 V
Drain Current Continuous (Figure 2). ID 40 A
Pulsed Drain Current (Note 2) IDM 100 A
Pulse Avalanche Rating EAS Figures 4, 12, 13  
Power Dissipation PD 160 W
Derate Above 25   1.07 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334		 T L
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Description

These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S40N10SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding perormance. RF1S40N10SM were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors RF1S40N10SM can be operated directly from integrated circuits.

Formerly developmental type TA9846




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