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RF1S45N06

Features: • 45A, 60V• r DS(ON) = 0.028W• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• +175 Operating TemperatureSpecifications UNITS Drain to Source Voltage VDSS 60 V Drain to Gate Voltage VDG...

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RF1S45N06: Features: • 45A, 60V• r DS(ON) = 0.028W• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• +175 Operating TemperatureSpe...

RF1S45N06 Data Sheet

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Part Number:
RF1S45N06
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 45A, 60V
• r DS(ON) = 0.028W
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175 Operating Temperature


Specifications

      UNITS
Drain to Source Voltage VDSS 60 V
Drain to Gate Voltage VDGR 60 V
Gate Source Voltage VGS ±20 V
Drain Current RMS Continuous. ID 45 A
Pulsed Drain Current IDM Refer to Peak Current Curve  
Pulsed Avalanche Rating EAS Refer to UIS Curve A
Maximum Avalanche Current IAM 125  
Power Dissipation TC = +25 PD 131 W
Derate above +25. PT 0.877 W/
Operating and Storage Temperature TSTG, TJ -55 to 175

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.


Description

The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors RF1S45N06 can be operated directly from integrated circuits.




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