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RF1S630SM

Features: • 9A, 200V• r DS(ON) = 0.400W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Related Literature - TB334 Guidelines for Soldering S...

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RF1S630SM: Features: • 9A, 200V• r DS(ON) = 0.400W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Chara...

RF1S630SM Data Sheet

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Part Number:
RF1S630SM
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 9A, 200V
• r DS(ON) = 0.400W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

      UNITS
Drain to Source Voltage (Note 1) VDSS 200 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) VDGR 200 V
Continuous Drain Current ID 9 A
TC = 100 ID 6 A
Pulsed Drain Current (Note 3) IDM 36 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 75 W
Linear Derating Factor   0.6 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 150 mJ
Operating and Storage Temperature TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Leads at 0.063in (1.6mm) from Case for 10s.		 T L
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Description

These are N-Channel enhancement mode silicon gate power field effect transistors.RF1S630SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types of RF1S630SM can be operated directly from integrated circuits.

Formerly developmental type TA17412.




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