Purchase RF1S630SM, In-stock RF1S630SM From SeekIC.
D/C:07+
Part Number: RF1S630SM
D/C: 07+
Description: These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...
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RF1S630SM
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DataSheet
General Description
RF1S630SM General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17412.
RF1S630SM Maximum Ratings
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | 200 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) | VDGR | 200 | V |
| Continuous Drain Current | ID | 9 | A |
| TC = 100 | ID | 6 | A |
| Pulsed Drain Current (Note 3) | IDM | 36 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Maximum Power Dissipation | PD | 75 | W |
| Linear Derating Factor | 0.6 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 150 | mJ |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Leads at 0.063in (1.6mm) from Case for 10s. |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RF1S630SM Features
• 9A, 200V
• r DS(ON) = 0.400W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• r DS(ON) = 0.400W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RF1S630SM
PDF/DataSheet Download
- Datasheet: RF1S630SM
- File Size: 63848 KB
- Manufacturer: INTERSIL [Intersil Corporation]
- Click here to Download
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