RF1S70N03 Selling Leads, Price trend, RF1S70N03 DataSheet download, circuit diagram from SeekIC.com

Features: • 70A, 30V• r DS(ON) = 0.010W• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve (Single Pulse)• +175 Operating TemperatureSpecifications UNITS Drain-Source Voltage VDSS 30 V Drain-Gate Volta...

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SeekIC No. : 004476163 Detail

RF1S70N03: Features: • 70A, 30V• r DS(ON) = 0.010W• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve (Single Pulse)• +175 Operating...

RF1S70N03 Data Sheet

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Part Number:: RF1S70N03
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/27

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MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm

Product Details

Description

Features:

• 70A, 30V
• r_DS(ON) = 0.010W
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175 Operating Temperature

Specifications

			UNITS
Drain-Source Voltage	V_DSS	30	V
Drain-Gate Voltage.	V_DGR	30	V
Gate-Source Voltage	V_GS	±20	V
Continuous Drain Current RMS Continuous.	I_D	70	A
Pulsed Drain Current	I_DM	200	A
Single Pulse Avalanche Rating	E_AS	(Refer to UIS Curve)
Power Dissipation T_C = +25	P_D	150	W
Above TC = +25oC, Derate Linearly	P_T	1.0	W/
Operating and Storage Junction Temperature Range	T_J, T_STG	-55 to 175

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Description

The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors RF1S70N03 can be operated directly from integrated circuits.

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