MFG:FAIRCHILD Package Cooled:TO-262/263 D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-262/263
D/C: 05+
Description: The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the Mega...
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.
| UNITS | |||
| Drain-Source Voltage | VDSS | 30 | V |
| Drain-Gate Voltage. | VDGR | 30 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current RMS Continuous. | ID | 70 | A |
| Pulsed Drain Current | IDM | 200 | A |
| Single Pulse Avalanche Rating | EAS | (Refer to UIS Curve) | |
| Power Dissipation TC = +25 | PD | 150 | W |
| Above TC = +25oC, Derate Linearly | PT | 1.0 | W/ |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 to 175 |
RF1S70N03
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