Position: Home  > All Categories> Integrated Circuits (ICs) > RF1S70N03SM

RF1S70N03SM

Features: • 70A, 30V• r DS(ON) = 0.010W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve (Single Pulse)• 175oC Operating Temperature• Related Literature - TB334 Guidelines for Soldering Surface Mount Compone...

product image

RF1S70N03SM Picture
See larger image
SeekIC No. : 004476164 Detail

RF1S70N03SM: Features: • 70A, 30V• r DS(ON) = 0.010W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve (Single Pulse)• 175oC Ope...

RF1S70N03SM Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
RF1S70N03SM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 70A, 30V
• r DS(ON) = 0.010W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

      UNITS
Drain to Source Voltage (Note 1) VDSS 30 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 30 V
Gate to Source Voltage VGS ±20 V
Continuous Drain Current (Figure 2) ID 70 A
Pulsed Drain Current IDM 200 A
Pulsed Avalanche Rating EAS Figure 5,13,14  
Power Dissipation PD 150 W
Derate Above 25   1.0 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 T L
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute M aximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S70N03SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors RF1S70N03SM can be operated directly from integrated circuits.

Formerly developmental type TA49025.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
Cables, Wires
821-0814-a
415-0100-150
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Prototyping Products
AVT4168
DE1
Crystals and Oscillators
WT325BI0030.000000
2SB49
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
View more