MFG:FAIRCHILD/HARRIS/Iintersil Package Cooled:TO-263 D/C:08+
MFG: FAIRCHILD/HARRIS/Iintersil
Package Cooled: TO-263
D/C: 08+
Description: These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses fea...
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49025.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | 30 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 30 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Figure 2) | ID | 70 | A |
| Pulsed Drain Current | IDM | 200 | A |
| Pulsed Avalanche Rating | EAS | Figure 5,13,14 | |
| Power Dissipation | PD | 150 | W |
| Derate Above 25 | 1.0 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute M aximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RF1S70N03SM
PDF/DataSheet Download
The RFP70N03, RF1S70N03, and RF1S70N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding pe...
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640SMare advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power M...
These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MO...
These are N-Channel enhancement mode silicon gate power field effect transistors.RF1S630SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power M...
These P-Channel power MOSFETs are manufactured using the MegaFET process. RF1S60P03SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RF1S60P03SM were designed...
The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outst...
Price: 0.1-0.2 USD
Plastic Connector Housing, 50 mA, 120 mW, DIP, 3 V, SFH756V, Infineon
Price: 0.95-1.2 USD
power Relay, DIP, Various Models, 106 mA, 47 W, 0.53 W, High-sensitivity, high-capacity
Price: 10.55-12.24 USD
NF-SPP-100-N-A2, Integrated Circuits, BGA, Integrated Circuits
Price: 0.1-2 USD
Triple Diffused Planar Transistor, TO247, 200V, 15A, 130W, 2SC3856
Price: 1.25-1.75 USD
2.0 Amp, Gate Drive Optocoupler, SOP-16, -0.5 to 5.5 Volts, 150mW
Price: 2.35-2.85 USD
CMOS PROGRAMMABLE INTERVAL TIMER
Price: 0.001-0.002 USD
CL05B103KONC, Samsung semiconductor, Capacitors
Price: 1.05-1.1 USD
Ethernet Integrated Switch, –0.3V to 4.0V, 2k MAC address, 384k bits packet buffer memory, 12.5 Mhz
Price: 530-580 USD
power GaAs FET, 15 V, 43.0dBm, 83.3 W, 5.3 ~ 5.9GHz, 50Ω
Price: 10-11 USD
PSD913F2V-15 PSD QFP52
Price: 1-3 USD
2 Mbit (256K x8) Page-Mode EEPROM, 32-lead PLCC, Single Voltage Read, Write Operations
Price: 18-20 USD
BLV75 Philips Semiconductors 36 V, VHF power transistor
