MFG:FAIRCHILD Package Cooled:TO-262/263 D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-262/263
D/C: 05+
Description: The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the M...
The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
| UNITS | |||
| Drain Source Voltage | VDSS | 60 | V |
| Drain Gate Voltage. | VDGR | 60 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Drain Current RMS Continuous | ID | 70 | A |
| Pulsed Drain Current | IDM | Refer to Peak Current Curve | |
| Single Pulse Avalanche Rating | EAS | (Refer to UIS Curve) | |
| Power Dissipation TC = +25. | PD | 150 | W |
| Derate above +25. | 1.0 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 |
RF1S70N06
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