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RF1S70N06

Features: • 70A, 60V• r DS(on) = 0.014W• Temperature Compensated PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve (Single Pulse)• +175 Operating TemperatureSpecifications UNITS Drain Source Voltage VDSS 60 V Drain Gate Volta...

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RF1S70N06: Features: • 70A, 60V• r DS(on) = 0.014W• Temperature Compensated PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve (Single Pulse)• +175 Operating ...

RF1S70N06 Data Sheet

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Part Number:
RF1S70N06
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 70A, 60V
• r DS(on) = 0.014W
• Temperature Compensated PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• +175 Operating Temperature


Specifications

      UNITS
Drain Source Voltage VDSS 60 V
Drain Gate Voltage. VDGR 60 V
Gate to Source Voltage VGS ±20 V
Drain Current RMS Continuous ID 70 A
Pulsed Drain Current IDM Refer to Peak Current Curve  
Single Pulse Avalanche Rating EAS (Refer to UIS Curve)  
Power Dissipation TC = +25. PD 150 W
Derate above +25.   1.0 W/
Operating and Storage Temperature TJ, TSTG -55 to 175

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.





Description

The RFG70N06, RFP70N06, RF1S70N06 and RF1S70N06SM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. RF1S70N06 were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.




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