RF1S70N06SM

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.014 Ohms
Continuous Drain Current : 70 A
Package / Case : TO-263AB


Features:

• 70A, 60V
• r _DS(on) = 0.014W
• Temperature Compensated PSPICE^® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175 Operating Temperature
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain-Source Voltage (Note 1)	VDSS	60	V
Drain-Gate Voltage.(RGS = 20kW) (Note 1)	VDGR	60	V
Continuous Drain Current	ID	70	A
Pulsed Drain Current (Note 3)	IDM	Refer to Peak Current Curve
Gate to Source Voltage	VGS	±20	A
Single Pulse Avalanche Rating	EAS	(Refer to UIS Curve)
Power Dissipation	PD	150	W
Linear Derating Factor		1.0	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 175
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Leads at 0.063in (1.6mm) from Case for 10s.	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

These are N-Channel power MOSFETs manufactured using the MegaFET process. RF1S70N06SM, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors RF1S70N06SM can be operated directly from integrated circuits.

Formerly developmental type TA49007.