Purchase RF1S9640SM, In-stock RF1S9640SM From SeekIC.
D/C:07+


Part Number: RF1S9640SM
D/C: 07+
Description: These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs desig...
D/C:07+


D/C: 07+
Description: These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs desig...
| IRF9640, RF1S9640SM | UNITS | |
| Drain to Source Breakdown Voltage (Note 1) . . . . . VDS | -200 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR | -200 | V |
| Continuous Drain Current . . . . . . . . . . ID |
-11 | A |
| TC = 100 . . . . . . . . . . . . . . . . . . ID |
-7 | A |
| Pulsed Drain Current (Note 2) . . . . . . . . . IDM | -44 | A |
| Gate to Source Voltage . . . . . . .. . . . . . VGS | ±20 |
V |
| Maximum Power Dissipation . . . . . . . . PD | 125 | W |
| Linear Derating Factor . . . . . . . . . . . | 1 | W/ |
| Single Pulse Avalanche Energy Rating (Note3, 4). . .. . EAS | 790 | mJ |
| Operating and Storage Temperature . . . . . . . . TJ, TSTG | -55 to 150 | |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL | 300 | |
| Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg | 260 |
RF1S9640SM
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