Features: • Single 3.3V Power Supply• +30dBm Saturated Output Power• 19dB Small Signal Gain• High Power Added Efficiency• Patent Pending Power Sense Technology• 1800MHz to 2500MHz Frequency RangeApplication• 2.5GHz ISM Band Applications• PCS Communic...
RF2163: Features: • Single 3.3V Power Supply• +30dBm Saturated Output Power• 19dB Small Signal Gain• High Power Added Efficiency• Patent Pending Power Sense Technology• 1...
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|
Parameter |
Rating |
Unit |
| Supply Voltage |
-0.5 to +6.0 |
VDC |
| Control Voltage(VPC) |
-0.5 to +3.3 |
V |
| DC Supply Current |
1000 |
mA |
| Input RF Power |
+15 |
dBm |
| Operating Ambient Temperature |
-40 to +85 |
|
| Storage Temperature |
-40 to +150 |
|
| Moisture sensitivity | JEDEC Level 3 |
The RF2163 is a linear, medium power, high efficiency amplifier IC designed specifically for low voltage operation. RF2163 is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.5GHz spread-spectrum transmitters. RF2163 is provided in a 16-pin leadless chip carrier with a backside ground and is self-contained with the exception of the output matching network and power supply feed line.