MOSFET TO-251AA N-Ch Power
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 50 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 14 A | ||
Resistance Drain-Source RDS (on) : | 0.1 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
RFD14N05L, RFD14N05LSM, RFP14N05L |
UNITS | |
Drain to Source Voltage (Note 1) VDSS | 50 | V |
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | V |
Continuous Drain Current ID | 14 | A |
Pulsed Drain Current (Note 3) IDM | 120 | A |
Gate to Source Voltage VGS | ±20 | V |
EAS Power Dissipation PD 25oC |
48 | W |
Derate above 25oC | 0.32 | A |
Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
Maximum Temperature for Soldering | ||
Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
Package Body for 10s, See Techbrief 334 . Tpkg | 260 | o C |
Technical/Catalog Information | RFD14N05L |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 14A, 5V |
Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
Power - Max | 48W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 40nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | RFD14N05L RFD14N05L |