RFD14N05LSM

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 10 V
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : TO-252AA


Features:

• 14A, 50V
• rDS(ON) = 0.100W
• Temperature Compensating PSPICE™ Model
• Can be Driven Directly from CMOS, NMOS, andTTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature- TB334 "Guidelines for Soldering Surface MountComponents to PC Boards"




Specifications

	RFD14N05L, RFD14N05LSM, RFP14N05L	UNITS
Drain to Source Voltage (Note 1) VDSS	50	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	50	V
Continuous Drain Current ID	14	A
Pulsed Drain Current (Note 3) IDM	120	A
Gate to Source Voltage VGS	±20	V
EAS Power Dissipation PD 25oC	48	W
Derate above 25oC	0.32	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, TSTG	-55 to 75	o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	o C
Package Body for 10s, See Techbrief 334 . Tpkg	260	o C

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
RFD14N05LSM	Full Production	RoHS Compliant	$0.55	TO-252(DPAK)	2	RAIL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: 14N05L
RFD14N05LSM9A	Full Production	RoHS Compliant	$0.60	TO-252(DPAK)	2	TAPE REEL	TBD	Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2: 14N05L

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product RFD14N05LSM is available. Click here for more information .

Description

These are N-channel power MOSFETs RFD14N05LSM manufactured usingthe MegaFET process. This process, which uses featuresizes approaching those of LSI integrated circuits, givesoptimum utilization of silicon, resulting in outstandingperformance. They were designed for use in applicationssuch as switching regulators, switching converters, motordrivers and relay drivers. This performance is accomplishedthrough a special gate oxide design which provides full ratedconductance at gate bias in the 3V-5V range, therebyfacilitating true on-off power control directly from logic level(5V) integrated circuits.

Formerly developmental type TA09870.

Parameters:

Technical/Catalog Information	RFD14N05LSM
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	14A
Rds On (Max) @ Id, Vgs	100 mOhm @ 14A, 5V
Input Capacitance (Ciss) @ Vds	670pF @ 25V
Power - Max	48W
Packaging	Tube
Gate Charge (Qg) @ Vgs	40nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RFD14N05LSM RFD14N05LSM