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RFD16N06LESM

Features: • 16A, 60V• rDS(ON) = 0.047Ω• Temperature Compensating PSPICE® Model• Can be Driven Directly from CMOS, NMOS, TTL Circuits• Peak Current vs Pulse Width Curve• UIS Rating Curve• Related Literature - TB334 Guidelines for Soldering Surfac...

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SeekIC No. : 004476509 Detail

RFD16N06LESM: Features: • 16A, 60V• rDS(ON) = 0.047Ω• Temperature Compensating PSPICE® Model• Can be Driven Directly from CMOS, NMOS, TTL Circuits• Peak Current vs Pulse Wi...

RFD16N06LESM Data Sheet

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Part Number:
RFD16N06LESM
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 16A, 60V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

  RFD16N06LESM UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 60 V
Continuous (Figure 2)ID 16 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve A
Gate to Source Voltage VGS +10, -8 V

Pulsed Drain Current IDM
Refer to UIS Curve		 W
Power Dissipation 90
Derate above 25oC 0.606 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

These are N-Channel power MOSFETs RFD16N06LESM manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits




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