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RFG50N05L

Features: • 50A, 50V• rDS(ON) = 0.022W• UIS SOA Rating Curve (Single Pulse)• Design Optimized for 5V Gate Drive• Can be Driven Directly from CMOS, NMOS, TTL Circuits• Compatible with Automotive Drive Requirements• SOA is Power Dissipation Limited• Na...

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SeekIC No. : 004476536 Detail

RFG50N05L: Features: • 50A, 50V• rDS(ON) = 0.022W• UIS SOA Rating Curve (Single Pulse)• Design Optimized for 5V Gate Drive• Can be Driven Directly from CMOS, NMOS, TTL Circuits...

RFG50N05L Data Sheet

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Part Number:
RFG50N05L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 50A, 50V
• rDS(ON) = 0.022W
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"


Specifications

  RFG50N05L RFP50N05L UNITS
Drain to Source Voltage (Note 1) VDSS 50 50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 50 50 V
Continuous Drain Curren ID 50 50 A
Pulsed Drain Current (Note 3) IDM 130 130 V
Maximum Power Dissipation PD ±10 ±10 V
Maximum Power Dissipation 110 110 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.88 0.88 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 o C
Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg 260 260 o C



Description

RFG50N05L are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RFG50N05L were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Formerly developmental type TA09872.




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