MFG:FAIRCHILD Package Cooled:TO-3P D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-3P
D/C: 05+
Description: These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, wh...
These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.
Formerly developmental type TA09872.
| RFG50N05L | RFP50N05L | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | 50 | V |
| Continuous Drain Curren ID | 50 | 50 | A |
| Pulsed Drain Current (Note 3) IDM | 130 | 130 | V |
| Maximum Power Dissipation PD | ±10 | ±10 | V |
| Maximum Power Dissipation | 110 | 110 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 0.88 | 0.88 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 (for TO-218AC) Tpkg | 260 | 260 | o C |
RFG50N05L
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