Purchase RFG50N05, In-stock RFG50N05 From SeekIC.
MFG:HAR
Part Number: RFG50N05
MFG: HAR
Description: These are N-Channel power MOSFET'S manufactured using the MegaFET process. This process, which uses fe...
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RFG50N05
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DataSheet
General Description
RFG50N05 General Description
These are N-Channel power MOSFET'S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772
RFG50N05 Maximum Ratings
| RFG50N05, RFP50N05 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | V |
| Continuous Drain Current ID | 50 | A |
| Pulsed Drain Current (Note 3) IDM | 120 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Power Dissipation PD | 132 | W |
| Derate Above 25oC | 0.88 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFG50N05 Features
• 50A, 50V
• rDS(ON) = 0.022W
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• rDS(ON) = 0.022W
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
RFG50N05
PDF/DataSheet Download
- Datasheet: RFG50N05
- File Size: 48483 KB
- Manufacturer: INTERSIL [Intersil Corporation]
- Click here to Download
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