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RFG50N06

Features: • 50A, 60V• r DS(ON) = 0.022W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating TemperatureSpecifications UNITS Drain to Source Voltage (Note 1) VDSS 60 V Drain to Gate ...

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RFG50N06: Features: • 50A, 60V• r DS(ON) = 0.022W• Temperature Compensating PSPICE® Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• 175 Operating Temperatur...

RFG50N06 Data Sheet

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Part Number:
RFG50N06
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 50A, 60V
• r DS(ON) = 0.022W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature


Specifications

      UNITS
Drain to Source Voltage (Note 1) VDSS 60 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR 60 V
Gate to Source Voltage VGS ±20 V
Pulsed Drain Current (Figure 2) ID 50 A
Pulsed Drain Current IDM (Figure 5)  
Pulse Avalanche Rating EAS (Figure 6, 14, 15)  
Power Dissipation PD 131 W
Linear Derating Factor   0.877 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 TL
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

RFG50N06 N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RFG50N06 were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49018.




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