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Package Cooled:02+  D/C:3P  

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Part Number: RFG60P03

 

 

Package Cooled: 02+

D/C: 3P

Description: These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses fea...


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RFG60P03 General Description


These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

Formerly developmental type TA49045.

RFG60P03 Maximum Ratings

      UNITS
Drain to Source Voltage (Note 1) VDSS -30 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR -30 V
Gate to Source Voltage VGS ±20 V
Continuous Drain Current (Figure 2) ID 60 A
Pulsed Drain Current (Note 3) IDM Refer to Peak Current Curve  
Single Pulse Avalanche Rating EAS Figure 6  
Maximum Power Dissipation (Figure 1) PD 176 W
Derate Above 25   1.17 W/
Operating and Storage Temperature TJ, TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334
TL
Tpkg
300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

RFG60P03 Features

• 60A, 30V
• r DS(ON) = 0.027W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
  - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

RFG60P03 datasheet

RFG60P03
PDF/DataSheet Download

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