RFG60P05E

MOSFET TO-247 P-Ch Power

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RFG60P05E Picture
SeekIC No. : 00164724 Detail

RFG60P05E: MOSFET TO-247 P-Ch Power

floor Price/Ceiling Price

Part Number:
RFG60P05E
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 50 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Package / Case : TO-247
Continuous Drain Current : 60 A
Drain-Source Breakdown Voltage : - 50 V
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

• 60A, 50V
• rDS(ON) = 0.030W
• Temperature Compensating PSPICE® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards"



Specifications

  RFG60P05E UNITS
Drain to Source Voltage (Note 1) VDSS -50 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR -50 V
Continuous Drain Current ID 60 A
Pulsed Drain Current (Note 3) IDM 200 A
Gate to Source Voltage VGS ±20 V
Power Dissipation PD 215 W
Derate Above 25oC 1.43 A
Pulsed Avalanche Rating UIS Refer to UIS SOA  
Operating and Storage Temperature .TJ, TSTG -55 to 75 o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 o C



Description

This is a P-Channel power MOSFET RFG60P05E manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. RFG60P05E was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits.

Formerly developmental type TA09835.




Parameters:

Technical/Catalog InformationRFG60P05E
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)50V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs30 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 7200pF @ 25V
Power - Max215W
PackagingTube
Gate Charge (Qg) @ Vgs450nC @ 20V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names RFG60P05E
RFG60P05E



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