RFG60P06E

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 60 V
Package / Case : TO-247
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

• 60A, 60V
• rDS(ON) = 0.030W
• Temperature Compensating PSPICE® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature


Specifications

	RFG60P06E	UNITS
Drain to Source Voltage (Note 1) VDSS	-60	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR	-60	V
Continuous Drain Current ID	60	A
Pulsed Drain Current (Note 3) IDM	200	A
Gate to Source Voltage VGS	±20	V
Power Dissipation PD	215	W
Derate Above 25oC	1.43	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, TSTG	-55 to 150	o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	o C
Package Body for 10s, See Techbrief 334 Tpkg	260	o C

Description

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. RFG60P06E were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA09836