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RFL4N15

Features: • 4A, 120V and 150V• rDS(ON) = 0.400W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier DeviceSpecifications RFL4N12 RFL4N15 UNITS Drain to Source V...

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SeekIC No. : 004476574 Detail

RFL4N15: Features: • 4A, 120V and 150V• rDS(ON) = 0.400W• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impeda...

RFL4N15 Data Sheet

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Part Number:
RFL4N15
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 4A, 120V and 150V
• rDS(ON) = 0.400W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device


Specifications

  RFL4N12 RFL4N15 UNITS
Drain to Source Voltage (Note 1) VDSS 120 150 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 120 150 V
RMS Continuous ID 4 4 A
Pulsed Drain Current (Note 3) IDM 15 15 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation PD 8.33 8.33 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 0.0667 0.0667 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFL4N15 designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching  transistors requiring high speed and low gate drive power. These types RFL4N15 can be operated directly from integrated circuits.




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