Features: • 4A, 120V and 150V
• rDS(ON) = 0.400W
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier DeviceSpecifications
|
RFL4N12 |
RFL4N15 |
UNITS |
| Drain to Source Voltage (Note 1) VDSS |
120 |
150 |
V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR |
120 |
150 |
V |
| RMS Continuous ID |
4 |
4 |
A |
| Pulsed Drain Current (Note 3) IDM |
15 |
15 |
V |
| Maximum Power Dissipation PD |
±20 |
±20 |
V |
| Maximum Power Dissipation PD |
8.33 |
8.33 |
W |
| Operating and Storage Temperature .TJ, TSTG |
-55 to 150 |
-55 to 150 |
o C |
| Linear Derating Factor |
0.0667 |
0.0667 |
W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL |
260 |
260 |
o C |
DescriptionRFL4N12 are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFL4N12 can be operated directly from integrated circuits.
The RFL4N12 is a type of N-Channel enhancement mode silicon gate power field effect transistor which is designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Features of the RFL4N12 are:(1)4A, 120V and 150V; (2)rDS(ON) = 0.400W; (3)SOA is power dissipation limited; (4)nanosecond Switching Speeds; (5)linear transfer characteristics; (6)high input impedance; (7)majority carrier device.
The absolute maximum ratings of the RFL4N12 can be summarized as:(1): drain to source voltage(VDSS) is 120 V; (2): drain to gate voltage (RGS = 1MW)(VDGR) is 120 V; (3): continuous drain current(ID) is 4 A; (4): pulsed drain current(IDM) is 15 A; (5): gate to source voltage(VGS) is ±20 V; (6): maximum power dissipation(PD) is 8.33 W; (7): linear derating factor is 0.0667 W/; (8): operating and storage temperature (TJ, TSTG) is -55 to 150.
RFL4N12 Data Sheet
