RFM18N08

Features: • 18A, 80V and 100V• rDS(ON) = 0.100W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS Drain to Source Voltage (Note 1) VDSS 80 100 80 100 ...

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SeekIC No. : 004476587 Detail

RFM18N08: Features: • 18A, 80V and 100V• rDS(ON) = 0.100W• Related Literature- TB334 Guidelines for Soldering Surface Mount Components to PC Boards Specifications RFM18N08 RFM1...

floor Price/Ceiling Price

Part Number:
RFM18N08
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• 18A, 80V and 100V
• rDS(ON) = 0.100W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

  RFM18N08 RFM18N10 RFP18N08 RFP18N10 UNITS
Drain to Source Voltage (Note 1) VDSS 80 100 80 100 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 80 100 80 100 V
Continuous Drain Current ID 18 18 18 18 A
Pulsed Drain Current (Note 3) IDM 45 45 45 45 A
Gate to Source Voltage VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation PD 100 100 100 100 W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID 0.8 0.8 0.8 0.8 W/oC
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL 300 300 300 300 o C
Package Body for 10s, See Techbrief 334 Tpkg 260 260 260 260 o C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors RFM18N08 designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types RFM18N08 can be operated directly from integrated circuits.




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