MFG:HARRIS Package Cooled:TO-220 D/C:08+
MFG: HARRIS
Package Cooled: TO-220
D/C: 08+
Description: The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This p...
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
| RFD8P06E, RFD8P06ESM, RFP8P06E | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous (Figure 2)ID | 16 | A |
| Pulsed Drain Current (Note 3) IDM | Refer to Peak Current Curve | A |
| Gate to Source Voltage VGS | ±20 | V |
Pulsed Drain Current IDM |
Refer to UIS Curve |
W |
| Power Dissipation | Refer to UIS Curve | |
| Derate above 25oC | 0.32 | W/oC |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFP8P06E
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MOSFET P-CH 50V 8A TO-220AB
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