MFG:HARRIS Package Cooled:TO-220 D/C:08+
MFG: HARRIS
Package Cooled: TO-220
D/C: 08+
Description: These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which...
These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49203.
| RFD8P06LE, RFD8P06LESM, RFP8P06LE |
UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -60 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -60 | V |
| Continuous Drain Current ID15 | A | |
| TC = 25oC ID |
-8 | |
| TC = 100oC . ID | -6.3 | |
| Pulsed Drain Current (Note 3) IDM | Refer to UIS Curve | A |
| Gate to Source Voltage VGS | ±10 | V |
Power Dissipation PD 25oC |
80 | W |
| Pulsed Avalanche Rating EAS | Figures 6, 16, 17 | |
| Derate above 25oC | 0.533 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Maximum Lead Temperature for Soldering TL (0.063in (1.6mm) from case for 10s) |
300 | o C |
RFP8P06LE
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