Purchase RFP8P10, In-stock RFP8P10 From SeekIC.
Package Cooled:7850 D/C:Intersil
- Table of contents:
RFP8P10
-
Suppliers
DataSheet
General Description
RFP8P10 Maximum Ratings
| RFP8P10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -100 | V |
| Continuous Drain Current ID | 8 | A |
| Pulsed Drain Current (Note 3) IDM | 20 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Drain Current | ||
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 31 | A |
| Pulsed Avalanche Rating UIS | Figures 6, 14, 15 | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFP8P10 Features
• 8A, 100V
• rDS(ON) = 0.400W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.400W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFP8P10
PDF/DataSheet Download
- Datasheet: RFP8P10
- File Size: 41886 KB
- Manufacturer: INTERSIL [Intersil Corporation]
- Click here to Download
- ·RFP-100-50SMA-B
- ETC [ETC]
- Cable & Coaxial Terminations
- 112721 KB
- ·RFP10N12
- GESS [GE Solid State]
- N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
- 225812 KB
- ·RFP10N12L
- TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-220AB
- 39560 KB
- ·RFP10N15
- INTERSIL [Intersil Corporation]
- 10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs
- 225812 KB
- ·RFP10N15L
- TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 10A I(D) | TO-220AB
- 39560 KB
- ·RFP10P03L
- HARRIS [Harris Corporation]
- 10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
- 196569 KB
- ·RFP10P12
- TRANSISTOR | MOSFET | P-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-220AB
- 40936 KB
- ·RFP10P15
- INTERSIL [Intersil Corporation]
- -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET
- 312440 KB
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