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Description: Actel Corporation, the leader in antifuse-based field programmable gate arrays (FPGAs), offers fully g...


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RH1280 General Description


Actel Corporation, the leader in antifuse-based field programmable gate arrays (FPGAs), offers fully guaranteed RadHard versions of the A1280 and A1020 devices with gate densities of 8,000 and 2,000 gate array gates, respectively.

The RH1020 and RH1280 devices are processed in 0.8,two-level metal epitaxial bulk CMOS technology. The devices are based on Actel's patented channeled array architecture,and employ Actel's PLICE antifuse technology. This architecture offers gate array flexibility, high performance,and fast design implementation through user programming.

Actel devices also provide unique on-chip diagnostic probe capabilities, allowing convenient testing and debugging.On-chip clock drivers with hard-wired distribution networks provide efficient clock distribution with minimum skew. A security fuse may be programmed to disable all further programming, and to protect the design from being copied or reverse engineered.

RH1280 Maximum Ratings

Symbol
Parameter
Limits
Units
VCC
DC Supply Voltage2,3,4
0.5 to +7.0
V
VI
Input Voltage
0.5 to VCC +0.5
V
VO
Output Voltage
0.5 to VCC +0.5
V
IIO
I/O Source/Sink Current5
±20
mA
TSTG
Storage Temperature
65 to +150
°C

Notes:
1. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. Devices should not be operated outside the recommended operating conditions.
2. VPP = VCC , except during device operation.
3. VSV = VCC , except during device operation.
4. VKS = GND , except during device operation.
5. Device inputs are normally high impedance and draw extremely low current. However, when input voltage is greater than VCC + 0.5V or less than GND 0.5V, the internal protection diode will be forward-biased and can draw excessive current.

RH1280 Features

• Guaranteed Total Dose Radiation Capability
• Low Single Event Upset Susceptibility
• High Dose Rate Survivability
• Latch-Up Immunity Guaranteed
• QML Qualified Devices
• Commercial Devices Available for Prototyping and Pre-Production Requirements
• Gate Capacities of 2,000 and 8,000 Gate Array Gates
• More Design Flexibility than Custom ASICs
• Significantly Greater Densities than Discrete Logic Devices
• Replaces up to 200 TTL Packages
• Design Library with over 500 Macro Functions
• Single-Module Sequential Functions
• Wide-Input Combinatorial Functions
• Up to Two High-Speed, Low-Skew Clock Networks
• Two In-Circuit Diagnostic Probe Pins Support Speed Analysis to 50 MHz
 
• Non-Volatile, User Programmable Devices
• Fabricated in 0.8 Epitaxial Bulk CMOS Process
• Unique In-System Diagnostic and Verification Capability with Silicon Explorer

RH1280 Typical Application

The RH1020 and RH1280 devices are targeted for use in military and space applications subject to radiation effects.

1. Accumulated Total Dose Effects
With the significant increase in Earth-orbiting satellite launches and the ever-decreasing time-to-launch design cycles, the RH1020 and RH1280 devices offer the best combination of total dose radiation hardness and quick design implementation necessary for this increasingly competitive industry. In addition, the high total dose capability allows the use of these devices for deep space probes, which encounter other planetary bodies where the total dose radiation effects are more pronounced.

2. Single Event Effects (SEE)
Many space applications are more concerned with the number of single event upsets and potential for latch-up in space. The RH1020 and RH1280 devices are latch-up immune, guaranteeing that no latch-up failures will occur. Single event upsets can occur in these devices as with all semiconductor products, but the rate of upset is low, as shown in the RadHard Radiation specifications table on page 7.

3. High Dose Rate Survivability
An additional radiation concern is high dose rate survivability. Solar flares and sudden nuclear events can cause immediate high levels of radiation. The RadHard devices are appropriate for use in these types of applications, including missile systems,ground-based communication systems, and orbiting satellites.

RH1280 Connection Diagram

RH1280  Connection Diagram

RH1280 datasheet

RH1
PDF/DataSheet Download

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