Features: · Low on-resistance.· Built-in G-S Protection Diode.· Small and Surface Mount Package (TSMT3) .Application·Power switching, DC / DC converter.Specifications Parameter Symbol Limits Unit Drain−source voltage VDSS 30 V Gate−source voltage VGSS ...
RSR025N03: Features: · Low on-resistance.· Built-in G-S Protection Diode.· Small and Surface Mount Package (TSMT3) .Application·Power switching, DC / DC converter.Specifications Parameter Symbol Lim...
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| Parameter |
Symbol |
Limits |
Unit | |
| Drain−source voltage |
VDSS |
30 |
V | |
| Gate−source voltage |
VGSS |
20 |
V | |
| Drain current | Continuous |
ID |
±2.5 |
A |
| Pulsed |
IDP |
±10 |
A(1) | |
| Source current (Body diode) |
Continuous |
IS |
0.8 |
A |
| Pulsed |
ISP |
3.2 |
A(1) | |
| Total power dissipation(TC=25) |
PD |
1 |
W | |
| Channel temperature |
Tch |
150 |
°C | |
| Range of Strage temperature |
Tstg |
−55 to 150 |
°C | |