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RX1214B170W

Features: • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor• Diffused emitter ballasting resistors improve ruggedness• Interdigitated emitter-base structure provides high emitter efficiency• Gold metallization with barrier realizes v...

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SeekIC No. : 004480541 Detail

RX1214B170W: Features: • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor• Diffused emitter ballasting resistors improve ruggedness• Interdigitated emitt...

RX1214B170W Data Sheet

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Part Number:
RX1214B170W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor
• Diffused emitter ballasting resistors improve ruggedness
• Interdigitated emitter-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input and output prematching networks allow an easier design of circuits.




Application

Intended for use in common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse, heavy duty operation within this band.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCES collector-emitter voltage RBE =0 - 65 V
VCEO collector-emitter voltage open base - 15 V
VEBO emitter-base voltage open collector - 3 V
IC collector current tp 150 µs; 5% - 15 A
Ptot total power dissipation Tmb 75 °C; tp 150 µs; 5% - 350 W
Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C
Tsld soldering temperature t 10 s; note 1 - 235 °C



Description

NPN silicon planar epitaxial microwave power transistor in a RX1214B170W metal ceramic flange package, with base connected to flange.




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