Features: ` High operating frequency dual synthesizer - S1M8831A: 0.71 to 1.2GHz(RF)/ 45 to 520MHz(IF) - S1M8833: 1.6 to 1.65GHz(RF)/ 45 to 520MHz(IF)` Operating voltage range: 2.7 to 4.0V` Low current consumption (S1M8831A: 5.0mA, S1M8833: 7.0mA)` Selectable power saving mode (ICC = 1uA typical @...
S1M8831A: Features: ` High operating frequency dual synthesizer - S1M8831A: 0.71 to 1.2GHz(RF)/ 45 to 520MHz(IF) - S1M8833: 1.6 to 1.65GHz(RF)/ 45 to 520MHz(IF)` Operating voltage range: 2.7 to 4.0V` Low curr...
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` High operating frequency dual synthesizer - S1M8831A: 0.71 to 1.2GHz(RF)/ 45 to 520MHz(IF) - S1M8833: 1.6 to 1.65GHz(RF)/ 45 to 520MHz(IF)
` Operating voltage range: 2.7 to 4.0V
` Low current consumption (S1M8831A: 5.0mA, S1M8833: 7.0mA)
` Selectable power saving mode (ICC = 1uA typical @ 3V)
` Dual-modulus prescaler and Fractional-N/Integer-N: - S1M8831A (RF) 8/9 Fractional-N - S1M8833 (RF) 16/17 Fractional-N - S1M8831A/33 (IF) 8/9 Integer-N
` Excellent in-band phase noise ( 85dBc/Hz @ PCS, -90dBc/Hz @CDMA) Improved fractional spurious performance ( < 80dBc)
` Frequency resolution (= 10kHz/64 @ fref = 9.84MHz)
` Fast channel switching time: < 500us
` Programmable charge pump output current: from 50uA to 800uA in 50uA steps
` Programmability via on-chip serial bus interface

|
Characteristic |
Symbol |
Value |
Unit |
| Power supply voltage |
VDD |
0.0 to 4.0 |
V |
| Voltage on any pin with GND = 0 volts |
V1 |
-0.3 to VDD+0.3 |
V |
| Power dissipation |
PD |
600 |
mW |
| Operating Temperature |
Ta |
-40 to +85 |
|
| Storage temperature |
TSTG |
-65 to +150 |