S29GL256M10TFIR10

The S29GL256M10TFIR10 is a kind of 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes flash memory. The device can be programmed either in the host system or in standard EPROM programmers. It requires only a single 3.0 volt power supply for both read and write functions.

There are some distinctive characteristics of S29GL256M10TFIR10 as follows: (1) manufactured on 0.23 um MirrorBit process technology; (2) 512 32 Kword (64 Kbyte) sectors; (3) compatibility with JEDEC standards; (4) 100,000 erase cycles typical per sector; (5) 100,000 erase cycles per sector typical; (6) 20-year data retention typical; (7) high performance: 100 ns access time, 4-word/8-byte page read buffer, 30 ns page read times and 16-word/32-byte write buffer; (8) low power consumption (typical values at 3.0 V, 5 MHz): 25 mA typical active read current, 50 mA typical erase/program current and 1 A typical standby mode current; (9) sector group protection: hardware-level method of preventing write operations within a sector group; (10) unlock bypass program command reduces overall multiple-word programming time.

What comes next is about the absolute maximum ratings of S29GL256M10TFIR10. (1): VCC (voltage with respect to ground) is from -0.5 to +4.0 V; (2): A9, OE#, ACC and RESET# (voltage with respect to ground) is from -0.5 to +12.5 V; (3): all other pins (voltage with respect to ground) is from -0.5 to VCC+0.5 V; (4): output short circuit current is 200 mA; (5): storage temperature for plastic packages is from -65 to +150; (6): ambient temperature with power applied is from -65 to +125.