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SA910

Features: • MMIC BiCMOS predriver amplifier• Low voltage 2.7 to 5.5V single supply operation• 820 to 905MHz bandwidth• High power gain >20dB• High power output >23dBm (typical) @ 3V• Efficiency = 35% (typical)• Wide gain control range: >32dB•...

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SeekIC No. : 004483826 Detail

SA910: Features: • MMIC BiCMOS predriver amplifier• Low voltage 2.7 to 5.5V single supply operation• 820 to 905MHz bandwidth• High power gain >20dB• High power output >2...

SA910 Data Sheet

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Part Number:
SA910
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• MMIC BiCMOS predriver amplifier
• Low voltage 2.7 to 5.5V single supply operation
• 820 to 905MHz bandwidth
• High power gain >20dB
• High power output >23dBm (typical) @ 3V
• Efficiency = 35% (typical)
• Wide gain control range: >32dB
• Few external components required
• Integrated power detector and comparison gain control circuitry
• 50 input, open-collector output
• SSOP-20 package
• Integrated regulator with offset adjustment for biasing an external output stage


Application

• 900MHz analog cellular
• Handheld transmitting equipment in the 820 to 905MHz frequency range
• Cordless phone


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER RATING UNITS
VCC1/VCCBIAS DC supply voltages -0.3 to +6.0 V
  Voltage applied to any other pin1 -0.3 to (VCC1 + 0.3) V
PD Power dissipation 1.0 W
PIN Input drive power 5 mW
PDET Input detect power 20 mW
PL Load power 500 mW
TSTG Storage temperature range -65 to +150 °C

NOTE:
1. Except RFOUT1 and RFOUT2 which can have 8V max.


Description

The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50%). The SA910 integrates power detection and control circuitry that is stabilized over temperature and voltage. In power down mode, the device draws less than 10mA of current. The SA910 is fabricated using Philips QUBiC BiCMOS process.




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