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SBT103AT

Features: Low forward voltage drop(VF)Low reverse leakage current (IR)Very small conduction power lossVery small switching power lossVery high switching speedVery high reliabilitySpecifications Characteristic Symbol Value Unit Peak Repetitive Reverse VoltageWorking Peak Reverse Vo...

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SeekIC No. : 004485267 Detail

SBT103AT: Features: Low forward voltage drop(VF)Low reverse leakage current (IR)Very small conduction power lossVery small switching power lossVery high switching speedVery high reliabilitySpecifications ...

SBT103AT Data Sheet

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Part Number:
SBT103AT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

Low forward voltage drop(VF)
Low reverse leakage current (IR)
Very small conduction power loss
Very small switching power loss
Very high switching speed
Very high reliability


Specifications

Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
RMS Reverse Voltage
VR(RMS)
28
V
Forward Continuous Current (Note 1)
IFM
350
mA
Non-Repetitive Peak Forward Surge Current @t 1.0s
IFSM
1.5
mA
Power Dissipation (Note 1)
Pd
225
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
RJA
444
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +125
°C



Description

SBT103AT series are Schottky Barrier Diodes fabricated by a series of proprietary Schottky barrier patents and technologies (SBT®) developed by Silicon-Based Technology Corporation, which exhibit high-performance characteristics for modern switching, conversion and protection applications with high speed and low power consumptions. The package types as described in this data sheet are set forth in routine production; other packages are available upon special orders.




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