Transistors RF Bipolar Power RF Transistor
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| Maximum Operating Frequency : | 175 MHz | Collector- Emitter Voltage VCEO Max : | 35 V |
| Emitter- Base Voltage VEBO : | 4 V | Continuous Collector Current : | 20 A |
| Power Dissipation : | 270 W | Package / Case : | M111 |
| Packaging : | Tray |

|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage |
65 |
v |
|
VCEO |
Collector-Emitter Voltage |
36 |
v |
|
VCES |
Collector-Emitter Voltage |
65 |
v |
|
VEBO |
Emitter-Base Voltage |
4.0 |
v |
|
IC |
Device Current |
20 |
A |
|
PDISS |
Power Dissipation |
270 |
W |
|
TJ |
Junction Temperature |
+200 |
°C |
|
TSTG |
Storage Temperature |
− 65 to +150 |
°C |
The SD1480 is a common emitter 28 V Class Cepitaxial silicon NPN planar transistor designedprimarily for VHF communications applications.
This internally matched device incorporates dif-fused emitter ballasting resistors nad provides highgain and stable operation across the entire 136- 175 MHz VHF communications band.