Transistors RF Bipolar Power RF Transistor
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Maximum Operating Frequency : | 860 MHz | Collector- Emitter Voltage VCEO Max : | 30 V |
Emitter- Base Voltage VEBO : | 3 V | Continuous Collector Current : | 8 A |
Power Dissipation : | 155 W | Package / Case : | M173 |
Packaging : | Tray |
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage |
45 |
v |
VCEO |
Collector-Emitter Voltage |
30 |
v |
VEBO |
Emitter-Base Voltage |
3.0 |
v |
IC |
Device Current |
8 |
A |
PDISS |
Power Dissipation |
135 |
W |
TJ |
Junction Temperature |
+200 |
°C |
TSTG |
Storage Temperature |
-50to +150 |
°C |
The SD1490 is a gold metallized epitaxial siliconNPN planar transistor using diffused emitter ballastresistors for high linearity Class A operation inUHF and Band IV, V television transmitters andtransposers