Features: .DESIGNED FOR HIGH POWER PULSEDIFF, . DME, TACAN APPLICATIONS .350 WATTS (typ.) IFF 1030 - 1090 MHz .300 WATTS (min.) DME 1025 - 1150 MHz .2900 WATTS (typ.) TACAN 960 - 1215 MHz .6.3 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION·EMITTER BALLASTING AND LOWTHERMAL RESISTANCE FORRELIABILITY A...
SD1540: Features: .DESIGNED FOR HIGH POWER PULSEDIFF, . DME, TACAN APPLICATIONS .350 WATTS (typ.) IFF 1030 - 1090 MHz .300 WATTS (min.) DME 1025 - 1150 MHz .2900 WATTS (typ.) TACAN 960 - 1215 MHz .6.3 dB MI...
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| Symbol | Parameter |
Value |
Unit |
| VCBO | Collector-Base Voltage |
65 |
V |
| VCEO | Collector-Emitter Voltage |
65 |
V |
| VEBO | Emitter-Base Voltage |
3.5 |
V |
| IC | Device Current |
22 |
A |
| PDISS | Power Dissipation |
875 |
W |
| TJ | Junction Temperature |
+200 |
|
| TSTG | Storage Temperature |
65 to 150 |
The SD1540 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1540 is packaged in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance.